170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon.

Rare-earth-ion Doped Waveguide Amplifiers and Lasers in Alumina and Polymers

170 Gbit/s data transmission, microring lasers operating across the telecom C-band, and narrow-linewidth distributed-feedback lasers in Al2O3:Er waveguides on silicon, as well as amplifiers and continuous-wave lasers in Nd-doped polymer waveguides on silicon are presented. OCIS codes: (130.3130) Integrated Optics Materials; (140.4480) Optical Amplifiers; (140.5680) Rare Earth and Transition Met...

Gbit / s transmission in an erbium - doped waveguide amplifier on silicon

Signal transmission experiments were performed at 170 Gbit/s in an integrated Al2O3:Er 3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fu...

Rare-earth-ion-doped Al2O3 for integrated optical amplification

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 10 cm. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 10 cm, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak ...

Design and Performance of an Erbium-Doped Silicon Waveguide Detector Operating at 1.5 m

A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p–n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5m light by Er ions in the waveguide core, followed by electron–hole pair generation by the excited Er and s...

Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier